SiC Power Devices and Modules

High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered these advancements, the major technology barriers preventing SiC power devices from performing to their fullest ability were identified. 3D wire bon...

SiC Power Devices and Modules

A study on electro thermal response of SiC power module during high temperature operation

This paper focuses on using high temperature operating capability of SiC power devices, which are packaged in power modules. A SiC Schottky barrier diode is mounted on an active metal brazed Si3N4 substrate as a heat resistive power module. The temperature dependency of electrical characteristics of the SiC device and thermal dynamics of the power module are modeled for numerical electro therma...

Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules

Article history: Received 29 June 2016 Accepted 8 July 2016 Available online 18 September 2016 SiC is a wide bandgap semiconductor with better electrothermal properties than silicon, including higher temperature of operation, higher breakdown voltage, lower losses and the ability to switch at higher frequencies. However, the power cycling performance of SiC devices in traditional silicon packag...

Novel Developments and Challenges for the SiC Power Devices

Silicon Carbide (SiC) is believed to be a revolutionary semiconductor material for power devices of the future; many SiC power devices have emerged as superior alternative power switch technology, especially in harsh environments with high temperature or high electric field. In this chapter, the challenges and recent develop‐ ments of SiC power devices are discussed. The first part is focused o...